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features ? over temperature shutdown ? over current shutdown ? active clamp ? low current & logic level input ? e.s.d protection ips021 ( s ) fully protected power mosfet switch data sheet no.pd 60148-k description the ips021/ips021s are fully protected three terminal smart power mosfets that feature over-cur rent, over-temperature, esd protection and drain to source active clamp.these devices combine a hexfet ? power mosfet and a gate driver. they offer full protection and high reliability required in harsh envi- ronments. the driver allows short switching times and provides efficient protection by turning off the power mosfet when the temperature exceeds 165 o c or when the drain current reaches 5a. these devices restart once the input is cycled. the avalanche capa- bility is significantly enhanced by the active clamp and covers most inductive load demagnetizations. packages product summary r ds(on) 150m ? (max) v clamp 50v i shutdown 5a t on / t off 1.5 s 3-lead d 2 pak ips021s 3-lead to-220 ips021 www.irf.com 1 typical connection load d s control in r in series (if needed) logic signal (refer to lead assignment for correct pin configuration)
ips021(s) 2 www.irf.com (1) limited by junction temperature (pulsed current limited also by internal wiring) (2) operations at higher switching frequencies is possible. see appl. notes. absolute maximum ratings absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. all voltage parameters are referenced to source lead. (t ambient = 25 o c unless otherwise specified). pcb mounting uses the standard foot- print with 70 m copper thickness. symbol parameter min. max. units test conditions v ds maximum drain to source voltage ? 47 v in maximum input voltage -0.3 7 i in, max maximum in current -10 +10 ma i sd cont. diode max. continous current (1) (rth=62 o c/w) ips021 ? 2.8 (rth=10 o c/w) ips021 ? 8 (rth=80 o c/w) ips021s ? 2.2 i sd pulsed diode max. pulsed current (1) ? 10a p d maximum power dissipation (1) (rth=62 o c/w) ips021 ? 2 (rth=80 o c/w) ips021s ? 1.56 esd1 electrostatic discharge v oltage (human body) ? 4 c=100pf, r=1500 ?, esd2 electrostatic discharge voltage (machine model) ? 0.5 c=200pf, r=0 ?, l=10 h t stor. max. storage temperature -55 150 t j max. max. junction temperature. -40 150 t lead lead temperature (soldering, 10 seconds) ? 300 v w a kv o c symbol parameter min. typ. max. units test conditions r th 1 thermal resistance free air ? 60 ? r th 2 thermal resistance junction to case ? 5 ? r th 1 thermal resistance with standard footprint ? 80 ? r th 2 thermal resistance with 1" square footprint ? 50 ? r th 3 thermal resistance junction to case ? 5 ? thermal characteristics to-220 d 2 pak (smd220) o c/w recommended operating conditions these values are given for a quick design. for operation outside these conditions, please consult the application notes. symbol parameter min. max. units v ds (max) continuous drain to source voltage ? 35 v ih high level input voltage 4 6 v il low level input voltage 0 0.5 i ds continuous drain current ? 1.8 a tamb=85 o c ( tambient = 85 o c, in = 5v, rth = 60 o c/w, tj = 125 o c) r in recommended resistor in series with in pin 0.5 5 k ? t r-in (max) max recommended rise time for in signal (see fig. 2) ? 1 s f r -i sc (2) max. frequency in short circuit condition (vcc = 14v) 0 1 khz v
ips021(s) www.irf.com 3 symbol parameter min. typ. max. units test condition s t sd over temperature threshold ? 165 ? o c see fig. 1 i sd over current threshold 4 5.5 7 a see fig. 1 v reset in protection reset threshold 1.5 2.3 3 v t reset time to reset protection 2 10 40 s v in = 0v, tj = 25 o c eoi_ot short circuit energy (see application note) ? 400 ? jv cc = 14v protection characteristics symbol parameter min. typ. max. units t est conditions r ds(on) on state resistance t j = 25 o c 100 130 150 t j = 150 o c ? 220 280 i dss 1 drain to source leakage current 0 0.01 25 v cc = 14v, t j = 25 o c i dss 2 drain to source leakage current 0 0.1 50 v cc = 40v, t j = 25 o c v clamp 1 drain to source clamp voltage 1 48 54 56 i d = 20ma (see fig.3 & 4) v clamp 2 drain to source clamp voltage 2 50 56 60 v in clamp in to source clamp voltage 7 8 9.5 i in = 1 ma v th in threshold voltage 1 1.5 2 i d = 50ma, v ds = 14v i in , -on on state in positive current 25 90 200 v in = 5v i in, -off on state in positive current 50 130 250 v in = 5v over-current triggered static electrical characteristics standard footprint 70 m copper thickness. t j = 25 o c (unless otherwise specified.) m ? v in = 5v, i ds = 1a i d =i shutdown (see fig.3 & 4) a v switching electrical characteristics v cc = 14v, resistive load = 10 ? , rinput = 50 ?, 100 s pulse, t j = 25 o c, (unless otherwise specified). symbol parameter min. typ. max. units t est conditions t on turn-on delay time 0.15 0.5 1 t r rise time 0.4 0.9 2 t rf time to (final r ds(on) 1.3) 2 6 12 t off turn-off delay time 0.8 2 3.5 t f fall time 0.5 1.3 2.5 q in total gate charge ? 3.3 ? nc v in = 5v see figure 2 see figure 2 s a
ips021(s) 4 www.irf.com lead assignments part number 1 2 3 in d s to-220 ips021 2 (d) d 2 pak (smd220) ips021s 1 3 in d s 2 (d) functional block diagram all values are typical in drain source 8.1 v 80 a 47 v i sense 200 k ? 1000 ? s q r q t > 165c i > isd
ips021(s) www.irf.com 5 14 v in d s 5 v 0 v l r + - vds ids vin v load rem : v load is negative during demagnetization figure 4 - active clamp test circuit ids vds vin t clam p vds clam p ( vcc ) ( see appl . notes to evaluate power dissipation ) figure 3 - active clamp waveforms figure 1 - timing diagram tr-in 10 % 90 % 90 % 10 % td on td off tf tr ids tr-in v i n vds figure 2 - in rise time & switching time definitions tsd (165 c) vin ids isd i shutdown t t shutdown t < t reset t > t reset 5 v 0 v
ips021(s) 6 www.irf.com all curves are typical values with standard footprints. operating in the shaded area is not recommended. figure 6 - normalized rds(on) (%) vs tj ( o c) figure 5 - rds on (m ? ) vs input voltage (v) tj = 150 o c tj = 25 o c 0 50 100 150 200 250 300 012345678 0% 20% 40% 60% 80% 100% 120% 140% 160% 180% 200% -50 -25 0 25 50 75 100 125 150 175 figure 8 - turn-off delay time & fall time (us) vs input voltage (v) figure 7 - turn-on delay time, rise time & time to 130% final rds (on) (us) vs input voltage (v) 0 1 2 3 4 5 6 7 8 9 10 012345678 ton dela y rise time 130% rdson 0 1 2 3 4 012345678 toff delay fall time
ips021(s) www.irf.com 7 figure 9 - turn-on delay time, rise time & time to 130% final rds(on) (us) vs in resistor ( ? ) figure 10 - turn-off delay time & fall time (us) vs in resistor ( ? ) 0.1 1 10 100 10 100 1000 10000 delay on rise time 130% rdson 0.1 1 10 100 10 100 1000 10000 delay off fall time figure 12 - i shutdown (a) vs temperature ( o c) figure 11 - current iim. & i shutdown (a) vs vin (v) 0 2 4 6 8 0123 45678 isd 25c ilim 25c 0 1 2 3 4 5 6 -50 -25 0 25 50 75 100 125 150
ips021(s) 8 www.irf.com figure 15b - max. iclamp (a) vs inductive load (mh) ips021s 0.1 1 10 0.01 0.1 1 10 100 single pulse 100 hz rth=60 c/w dt=25 c 1khz rth=60 c/w dt=25 c vbat = 14 v tjini = t sd figure 14 - ids (a) vs protection resp. time (s) ips021 & ips021s 1 10 100 t=25 c std. footprint t=100 c std. footprint current path capability should be above this curve load characteristic should be below this curve figure 15a - iclamp (a) vs inductive load (mh) ips021 figure 13 - max.cont. ids (a) vs amb. temperature ( o c) ips021/ips021s 0.1 1 10 0.01 0.1 1 10 100 sin g le pulse max. current 100 hz rth=60 c/w dt=25 c 1khz rth=60 c/w dt=25 c vbat = 14 v tjini = t sd 0 1 2 3 4 5 6 7 8 -50 0 50 100 150 200 rth = 5 c/w rth = 15 c/w 1" footprint 35 c/w std. footprint 60 c/w
ips021(s) www.irf.com 9 figure 16 - transient thermal imped. ( o c/w) vs time (s) 0.01 0.1 1 10 100 single pulse figure 17 - input current (ua) vs junction temperature ( o c) 0 20 40 60 80 100 120 140 160 180 200 -50 -25 0 25 50 75 100 125 150 iin,on iin,off 0 2 4 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 150 treset rise time fall time figure 18 - rise time, fall time and treset ( s) vs tj ( o c) figure 19 -vin clamp and vds clamp (%) vs tj ( o c) 80% 85% 90% 95% 100% 105% 110% 115% 120% -50-25 0 255075100125150 vds clamp @ isd vin clamp @ 10ma
ips021(s) 10 www.irf.com 01-6024 00 irgb 01-3026 01 (to-220ab) case outline notes: 2 2x 3-lead to-220ab 3-lead d 2 pak 01-6022 00 01-0016 05 (to-263ab)
ips021(s) www.irf.com 11 tape & reel - d 2 pak (smd220) ir world headquarters: 233 kansas st., el segundo, california 90245 tel: (310) 252-7105 data and specifications subject to change without notice. 6/11/2001 01-3072 00
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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